Topological effects are predicted to have many potential uses in future electronic devices. Therefore, finding ways to control these effects is desirable. As predicted by first-principles calculations, the one-dimensional (1D) transition-metal trichalcogenide TaSe3 is a strongly topological semimetal. It has a unique atomic arrangement of two inequivalent chains; the shorter distance between the Se atoms in the type-I chains (red in figures) creates strong covalent p-p bonding between the two Se atoms, whereas this bond is broken in the type-II chains (blue in figures) so that bonds form with the Ta atoms from the neighboring type-I chains. The chains are along the b-axis crystallographic direction. Calculations suggest that nontrivial topological phases can be induced by the distorted type-II chain under ambient conditions and/or strain. In collaboration with John Singleton at the Pulsed-Field Facility, National High Magnetic Field Laboratory, research led by Dr. Rongying Jin of the University of South Carolina (USC) investigated the effect of strain on TaSe3 by measuring its magnetoresistance (MR) in fields of up to 60 T. Both ribbon-shaped (under ambient conditions) and ring-shaped (i.e., deliberately strained) samples were studied.